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FQB9N25TM Espesifikasyon teknoloji

MOSFET N-CH 250V 9.4A D2PAK

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 3.13W (Ta), 90W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 420 mOhm @ 4.7A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 250V 9.4A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount D²PAK (TO-263AB)
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