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FQPF5N15 Espesifikasyon teknoloji

MOSFET N-CH 150V 4.2A TO-220F

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 32W (Tc)
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±25V
Supplier Device Package TO-220F
Rds On (Max) @ Id, Vgs 800 mOhm @ 2.1A, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 150V 4.2A (Tc) 32W (Tc) Through Hole TO-220F
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