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NTMD6601NR2G Espesifikasyon teknoloji

MOSFET 2N-CH 80V 1.1A 8SOIC

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Arrays
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Rds On (Max) @ Id, Vgs 215 mOhm @ 2.2A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 80V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SOIC
Power - Max 600mW
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 1.1A
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NTMD6601NR2G manifaktirè mak: AMI Semiconductor / ON Semiconductor, Bonchip stock, NTMD6601NR2G pri referans. NTMD6601NR2G paramèt, NTMD6601NR2G Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize NTMD6601NR2G Pluggable Connectors, DSP Datesheet PDF, jwenn NTMD6601NR2G dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, NTMD6601NR2G leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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