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DMT3006LDV-7 Espesifikasyon teknoloji

MOSFET BVDSS: 25V 30V POWERDI333

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Factory Lead Time 22 Weeks
Transistor Element Material SILICON
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature (Max) 150°C
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain Current-Max (Abs) (ID) 25A
DS Breakdown Voltage-Min 30V
Power Dissipation-Max (Abs) 1.8W
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Surface Mount YES
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 6
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code S-PDSO-F6
Operating Temperature (Min) -55°C
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.01Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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