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EPC8003ENGR Espesifikasyon teknoloji

TRANS GAN 100V 2.5A BUMPED DIE

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer EPC
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package Die
Rds On (Max) @ Id, Vgs 300 mOhm @ 500mA, 5V
Packaging Tray
Operating Temperature -40°C ~ 125°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 38pF @ 50V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology GaNFET (Gallium Nitride)
Series eGaN®
Power Dissipation (Max) -
Package / Case Die
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 0.32nC @ 5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
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