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SI4396DY-T1-GE3 Espesifikasyon teknoloji

MOSFET N-CH 30V 16A 8-SOIC

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.6V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 3.1W (Ta), 5.4W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1675pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 16A (Tc) 3.1W (Ta), 5.4W (Tc) Surface Mount 8-SO
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 10A, 10V
Packaging Original-Reel®
Other Names SI4396DY-T1-GE3DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
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SI4396DY-T1-GE3 manifaktirè mak: Electro-Films (EFI) / Vishay, Bonchip stock, SI4396DY-T1-GE3 pri referans. SI4396DY-T1-GE3 paramèt, SI4396DY-T1-GE3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SI4396DY-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, jwenn SI4396DY-T1-GE3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SI4396DY-T1-GE3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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