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SI9926BDY-T1-GE3 Espesifikasyon teknoloji

MOSFET 2N-CH 20V 6.2A 8-SOIC

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.5V @ 250µA
Series TrenchFET®
Power - Max 1.14W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
FET Feature Logic Level Gate
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 6.2A 1.14W Surface Mount 8-SO
Base Part Number SI9926
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 20 mOhm @ 8.2A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.2A
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SI9926BDY-T1-GE3 manifaktirè mak: Electro-Films (EFI) / Vishay, Bonchip stock, SI9926BDY-T1-GE3 pri referans. SI9926BDY-T1-GE3 paramèt, SI9926BDY-T1-GE3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SI9926BDY-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, jwenn SI9926BDY-T1-GE3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SI9926BDY-T1-GE3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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