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GP1M008A050HG Espesifikasyon teknoloji

MOSFET N-CH 500V 8A TO220

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220
Power Dissipation (Max) 120W (Tc)
Package / Case TO-220-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 850 mOhm @ 4A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 937pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 500V
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GP1M008A050HG manifaktirè mak: Global Power Technologies Group, Bonchip stock, GP1M008A050HG pri referans. GP1M008A050HG paramèt, GP1M008A050HG Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize GP1M008A050HG Pluggable Connectors, DSP Datesheet PDF, jwenn GP1M008A050HG dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, GP1M008A050HG leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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