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IXFQ12N80P Espesifikasyon teknoloji

MOSFET N-CH 800V 12A TO-3P

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Supplier Device Package TO-3P
Rds On (Max) @ Id, Vgs 850 mOhm @ 500mA, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 800V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series HiPerFET™, PolarHT™
Power Dissipation (Max) 360W (Tc)
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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IXFQ12N80P manifaktirè mak: IXYS Corporation, Bonchip stock, IXFQ12N80P pri referans. IXFQ12N80P paramèt, IXFQ12N80P Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize IXFQ12N80P Pluggable Connectors, DSP Datesheet PDF, jwenn IXFQ12N80P dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, IXFQ12N80P leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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