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IXFT30N85XHV Espesifikasyon teknoloji

MOSFET N-CH 850V 30A TO268-3

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Technology MOSFET (Metal Oxide)
Series HiPerFET™
Power Dissipation (Max) 695W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 850V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-268 (IXFT)
Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
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