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IXTH3N100P Espesifikasyon teknoloji

MOSFET N-CH 1000V 3A TO-247

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-247 (IXTH)
Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1.5A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 1000V (1kV)
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series PolarVHV™
Power Dissipation (Max) 125W (Tc)
Package / Case TO-247-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
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IXTH3N100P manifaktirè mak: IXYS Corporation, Bonchip stock, IXTH3N100P pri referans. IXTH3N100P paramèt, IXTH3N100P Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize IXTH3N100P Pluggable Connectors, DSP Datesheet PDF, jwenn IXTH3N100P dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, IXTH3N100P leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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