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AUIRF7648M2TR Espesifikasyon teknoloji

MOSFET N-CH 60V 179A DIRECTFET

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 9
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 70 mJ
Height 740μm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric M4
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 63W Tc
Power Dissipation 2.5W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.9V @ 150μA
Current - Continuous Drain (Id) @ 25°C 14A Ta 68A Tc
Rise Time 23ns
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Threshold Voltage 4V
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 272A
Max Junction Temperature (Tj) 175°C
Radiation Hardening No
RoHS Status ROHS3 Compliant
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