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BC848CE6433HTMA1 Espesifikasyon teknoloji

BC848CE6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Transistè BJT Sèl
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2005
Part Status Not For New Designs
Number of Terminations 3
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
Base Part Number BC848
Number of Elements 1
Power Dissipation 330mW
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 30V
hFE Min 110
Length 2.9mm
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 330mW
Terminal Form GULL WING
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 30V
Emitter Base Voltage (VEBO) 6V
Height 900μm
Width 1.3mm
Lead Free Lead Free
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BC848-B-RTK/P KEC Espesyalize Chò ICs 3471
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