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BCR192WH6327XTSA1 Espesifikasyon teknoloji

TRANS PREBIAS PNP 250MW SOT323-3

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
hFE Min 70
Resistor - Emitter Base (R2) 47 k Ω
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Published 2011
Part Status Not For New Designs
Number of Terminations 3
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.14
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number BCR192
Polarity PNP
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 22 k Ω
RoHS Status ROHS3 Compliant
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Gen lòt ki genyen ladan yo   "BCR19"   pati

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