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BSO080P03NS3EGXUMA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 30V 12A 8-Pin DSO

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 14.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 12A Ta
Rise Time 47ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 12A
Max Dual Supply Voltage -30V
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Turn-Off Delay Time 64 ns
Gate to Source Voltage (Vgs) 25V
Avalanche Energy Rating (Eas) 149 mJ
Lead Free Lead Free
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