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BSP318SL6327HTSA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 90m Ω @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status RoHS Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 1999
Part Status Obsolete
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 20μA
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 2.6A
DS Breakdown Voltage-Min 60V
Radiation Hardening No
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