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BSP320SH6327XTSA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 120m Ω @ 2.9A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 2.9A Tj
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage 3V
Max Dual Supply Voltage 60V
Recovery Time 56 ns
Length 6.5mm
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 60 mJ
Height 1.6mm
Width 3.5mm
RoHS Status ROHS3 Compliant
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