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BSZ050N03LSGATMA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 30V 16A 8-Pin TSDSON

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 16A
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 70 mJ
Lead Free Contains Lead
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.1W Ta 50W Tc
Power Dissipation 50W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 16A Ta 40A Tc
Rise Time 4ns
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
RoHS Status ROHS3 Compliant
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