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BSZ100N03LSGATMA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 30V 12A 8-Pin TSDSON

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 12A
Max Dual Supply Voltage 30V
Lead Free Contains Lead
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.1W Ta 30W Tc
Power Dissipation 2.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 12A Ta 40A Tc
Rise Time 2.6ns
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
RoHS Status ROHS3 Compliant
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