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DF200R12KE3HOSA1 Espesifikasyon teknoloji

IGBT MODULE VCES 1200V 200A

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / IGBTs Modil
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Number of Pins 5
Operating Temperature -40°C~125°C
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
Number of Elements 1
Power Dissipation 1.04kW
Power - Max 1040W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 5mA
Collector Emitter Saturation Voltage 1.7V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
NTC Thermistor No
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2012
Part Status Active
Number of Terminations 5
Terminal Position UPPER
Pin Count 5
Configuration Single
Case Connection ISOLATED
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 295A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Turn Off Time-Nom (toff) 830 ns
Input Capacitance (Cies) @ Vce 14nF @ 25V
Lead Free Lead Free
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Gen lòt ki genyen ladan yo   "DF200"   pati

Pati sa yo genyen ladan yo  'DF200' 

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DF200R12KE3HOSA1 manifaktirè mak: Infineon Technologies, Bonchip stock, DF200R12KE3HOSA1 pri referans. DF200R12KE3HOSA1 paramèt, DF200R12KE3HOSA1 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize DF200R12KE3HOSA1 Pluggable Connectors, DSP Datesheet PDF, jwenn DF200R12KE3HOSA1 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, DF200R12KE3HOSA1 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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