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DF200R12W1H3FB11BOMA1 Espesifikasyon teknoloji

MOD DIODE BRIDGE EASY1B-2-1

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / IGBTs Modil
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 32 Weeks
Package / Case Module
Transistor Element Material SILICON
Published 2002
Part Status Not For New Designs
Number of Terminations 18
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-XUFM-X18
Configuration Three Phase Inverter
Power - Max 20mW
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 30A
Vce(on) (Max) @ Vge, Ic 1.45V @ 15V, 30A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 6.15nF @ 25V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~150°C
Series EasyPACK™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Case Connection ISOLATED
Transistor Application POWER CONTROL
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 27 ns
Turn Off Time-Nom (toff) 475 ns
NTC Thermistor Yes
RoHS Status ROHS3 Compliant
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