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F3L100R12W2H3B11BPSA1 Espesifikasyon teknoloji

IGBT MODULE VCES 600V 200A

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Category Discrete Semiconductors / IGBTs Modil
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Screw
Package / Case Module
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 32
Additional Feature UL APPROVED
Terminal Form UNSPECIFIED
Number of Elements 4
Case Connection ISOLATED
Transistor Application GENERAL PURPOSE
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 175 ns
Turn Off Time-Nom (toff) 465 ns
Input Capacitance (Cies) @ Vce 6.15nF @ 25V
Lead Free Contains Lead
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Chassis Mount
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
JESD-30 Code R-XUFM-X32
Configuration Three Phase Inverter
Power - Max 375W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 100A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 50A
NTC Thermistor Yes
RoHS Status RoHS Compliant
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