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IFS150B12N3E4B31BOSA1 Espesifikasyon teknoloji

IGBT MOD 1200V 300A 750W

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / IGBTs Modil
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-XUFM-X41
Configuration Full Bridge
Power - Max 750W
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 240 ns
Turn Off Time-Nom (toff) 640 ns
Input Capacitance (Cies) @ Vce 9.35nF @ 25V
Lead Free Contains Lead
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Base
Package / Case Module
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 41
Additional Feature UL APPROVED
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 6
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 300A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
NTC Thermistor Yes
RoHS Status ROHS3 Compliant
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