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IKW40N65ES5XKSA1 Espesifikasyon teknoloji

Trans IGBT Chip N-CH 650V 79A 230000mW 3-Pin(3+Tab) TO-247 Tube

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Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 230W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 79A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 40A, 10 Ω, 15V
Turn Off Time-Nom (toff) 204 ns
Gate Charge 95nC
Td (on/off) @ 25°C 19ns/130ns
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™
Part Status Active
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Power - Max 230W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 73 ns
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A
IGBT Type Trench
Current - Collector Pulsed (Icm) 160A
Switching Energy 860μJ (on), 400μJ (off)
Lead Free Lead Free
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