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IPB180N06S4H1ATMA2 Espesifikasyon teknoloji

MOSFET N-CH 60V 180A TO263-7

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 7
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 30 ns
Rds On (Max) @ Id, Vgs 1.7m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 21900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 180A
Max Dual Supply Voltage 60V
Height 4.57mm
Width 9.45mm
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Weight 1.59999g
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G6
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 200μA
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 5ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Length 10.31mm
RoHS Status ROHS3 Compliant
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