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IPC100N04S5L1R9ATMA1 Espesifikasyon teknoloji

MOSFET N-CH 40V 100A 8TDSON

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 100W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 1.9m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 100A
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 130 mJ
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2016
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 50μA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Drain-source On Resistance-Max 0.0025Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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