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IPD50N03S207ATMA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Rds On (Max) @ Id, Vgs 7.3m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 40ns
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 250 mJ
Lead Free Contains Lead
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