IPI110N20N3GAKSA1 Espesifikasyon teknoloji

MOSFET N-CH 200V 88A TO262-3

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 88A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 88A Tc
Rise Time 26ns
Vgs (Max) ±20V
Turn-Off Delay Time 41 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 352A
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 88A
Max Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 560 mJ
Lead Free Contains Lead
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