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IPP076N15N5AKSA1 Espesifikasyon teknoloji

MV POWER MOS

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Surface Mount NO
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 112A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 448A
Max Junction Temperature (Tj) 175°C
Height 20.7mm
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation 214W
Turn On Delay Time 14 ns
Drain to Source Voltage (Vdss) 150V
Turn-Off Delay Time 20 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 150V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 5.9mOhm
RoHS Status ROHS3 Compliant
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