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IRF530NPBF Espesifikasyon teknoloji
IRF530NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip
Atribi pwodwi | Valè atribi |
---|---|
Category | Discrete Semiconductors / Sèl MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 12 Weeks |
Mount | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Packaging | Tube |
Series | HEXFET® |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Voltage - Rated DC | 100V |
Peak Reflow Temperature (Cel) | 250 |
[email protected] Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 70W |
Turn On Delay Time | 9.2 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 17A Tc |
Rise Time | 22ns |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 35 ns |
JEDEC-95 Code | TO-220AB |
Drain to Source Breakdown Voltage | 100V |
Dual Supply Voltage | 100V |
Nominal Vgs | 4 V |
Length | 10.5156mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Atribi pwodwi | Valè atribi |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Contact Plating | Tin |
Mounting Type | Through Hole |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Published | 2001 |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Resistance | 90MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Current Rating | 17A |
Lead Pitch | 2.54mm |
Power Dissipation-Max | 70W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 90m Ω @ 9A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 25 ns |
Continuous Drain Current (ID) | 17A |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 60A |
Recovery Time | 140 ns |
Height | 8.77mm |
Width | 4.69mm |
REACH SVHC | No SVHC |
Lead Free | Lead Free |
IRF530NPBF Dokiman yo
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Pati # | Manifakti | Kategori | Disponibilite |
---|---|---|---|
IRF530 | Electro-Films (EFI) / Vishay | Transistors - FETs, MOSFETs - Single | 90290 |
IRF530 | Vishay / Siliconix | Transistors - FETs, MOSFETs - Single | 2347 |
IRF530 | STMicroelectronics | Transistors - FETs, MOSFETs - Single | 90384 |
IRF530 | Vishay Siliconix | Sèl MOSFETs Transistors | |
IRF5305 | IR | Espesyalize Chò ICs | 10354 |
IRF5305L | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 6330 |
IRF5305LPBF | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 3316 |
IRF5305LPBF. | IR | Espesyalize Chò ICs | 2716 |
IRF5305P | IRF | Espesyalize Chò ICs | 31 |
IRF5305PBF | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 471 |
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IRF530NPBF manifaktirè mak: Infineon Technologies, Bonchip stock, IRF530NPBF pri referans. IRF530NPBF paramèt, IRF530NPBF Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize IRF530NPBF Pluggable Connectors, DSP Datesheet PDF, jwenn IRF530NPBF dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, IRF530NPBF leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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