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IRF7342TRPBF Espesifikasyon teknoloji

MOSFET 2P-CH 55V 3.4A 8-SOIC

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1999
Part Status Active
Number of Terminations 8
Resistance 105mOhm
Voltage - Rated DC -55V
Terminal Form GULL WING
Base Part Number IRF7342PBF
Row Spacing 6.3 mm
Element Configuration Dual
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 55V
Turn-Off Delay Time 43 ns
Threshold Voltage -1V
Drain to Source Breakdown Voltage -55V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Current Rating -3.4A
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.4A
Rise Time 10ns
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) -3.4A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 114 mJ
Recovery Time 80 ns
FET Feature Logic Level Gate
Height 1.75mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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