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IRFHM792TR2PBF Espesifikasyon teknoloji

MOSFET 2N-CH 100V 2.3A 8PQFN

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-PQFN (3.3x3.3), Power33
Published 2011
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 2.3W
Element Configuration Dual
Power - Max 2.3W
Rds On (Max) @ Id, Vgs 195mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 251pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Turn-Off Delay Time 5.2 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 100V
Recovery Time 23 ns
Drain to Source Resistance 195mOhm
Nominal Vgs 3 V
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number IRFHM792PBF
Power Dissipation 2.3W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 4V @ 10μA
Current - Continuous Drain (Id) @ 25°C 2.3A
Rise Time 4.7ns
Fall Time (Typ) 2.6 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 251pF
FET Feature Standard
Rds On Max 195 mΩ
REACH SVHC No SVHC
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