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IRFP90N20DPBF Espesifikasyon teknoloji

IRFP90N20DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Voltage - Rated DC 200V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Channels 1
Element Configuration Single
Power Dissipation 580W
Turn On Delay Time 23 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 94A Tc
Rise Time 160ns
Vgs (Max) ±30V
Turn-Off Delay Time 43 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Recovery Time 340 ns
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 23mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 94A
Number of Elements 1
Power Dissipation-Max 580W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 56A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 79 ns
Continuous Drain Current (ID) 94A
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 90A
Dual Supply Voltage 200V
Nominal Vgs 5 V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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