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IRFR1010ZTRLPBF Espesifikasyon teknoloji

MOSFET N-CH 55V 42A DPAK

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 140W Tc
Power Dissipation 140W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 76ns
Vgs (Max) ±20V
Turn-Off Delay Time 42 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0075Ohm
Avalanche Energy Rating (Eas) 220 mJ
Length 6.7056mm
Radiation Hardening No
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 42A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 2.3876mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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