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IRFR3709ZTRPBF Espesifikasyon teknoloji

MOSFET N-CH 30V 86A DPAK

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 6.5MOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.25V @ 250μA
Current - Continuous Drain (Id) @ 25°C 86A Tc
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Recovery Time 44 ns
Height 2.26mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 86A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.9 ns
Continuous Drain Current (ID) 86A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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