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IRFU120ZPBF Espesifikasyon teknoloji

MOSFET N-CH 100V 8.7A I-PAK

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package IPAK (TO-251)
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 190MOhm
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Turn On Delay Time 8.3 ns
Rds On (Max) @ Id, Vgs 190mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Input Capacitance 310pF
Drain to Source Resistance 190mOhm
Nominal Vgs 4 V
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
Part Status Obsolete
Termination Through Hole
Max Operating Temperature 175°C
Voltage - Rated DC 100V
Current Rating 8.7A
Power Dissipation 35W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 100V
Recovery Time 36 ns
Rds On Max 190 mΩ
Height 6.22mm
Width 2.3876mm
REACH SVHC No SVHC
Lead Free Lead Free
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