IRGB4056DPBF Espesifikasyon teknoloji

IRGB4056DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 140W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A
IGBT Type Trench
Current - Collector Pulsed (Icm) 48A
Switching Energy 75μJ (on), 225μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 140W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 40 ns
Rise Time 17ns
Turn-Off Delay Time 94 ns
Max Collector Current 24A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.55V
Test Condition 400V, 12A, 22 Ω, 15V
Turn Off Time-Nom (toff) 143 ns
Gate Charge 25nC
Td (on/off) @ 25°C 31ns/83ns
Gate-Emitter Voltage-Max 20V
Height 9.02mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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