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IRGP4650DPBF Espesifikasyon teknoloji

IRGP4650DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Part Status Active
ECCN Code EAR99
Max Power Dissipation 268W
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 76A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 35A, 10 Ω, 15V
Gate Charge 104nC
Td (on/off) @ 25°C 46ns/105ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 54ns
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Rise Time-Max 42ns
Power Dissipation 134W
Power - Max 268W
Collector Emitter Voltage (VCEO) 1.9V
Reverse Recovery Time 120 ns
Collector Emitter Saturation Voltage 1.6V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 35A
Current - Collector Pulsed (Icm) 105A
Switching Energy 390μJ (on), 632μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Width 5.31mm
REACH SVHC No SVHC
Lead Free Lead Free
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