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IRGSL10B60KDPBF Espesifikasyon teknoloji

IGBT 600V 22A 156W TO220-3

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 22A
Collector Emitter Breakdown Voltage 600V
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 44A
Switching Energy 140μJ (on), 250μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084002g
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 156W
[email protected] Reflow Temperature-Max (s) 40
Rise Time-Max 28ns
Power Dissipation 156W
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 2.2V
Reverse Recovery Time 90 ns
Collector Emitter Saturation Voltage 2.2V
Test Condition 400V, 10A, 47 Ω, 15V
Turn Off Time-Nom (toff) 276 ns
Gate Charge 38nC
Td (on/off) @ 25°C 30ns/230ns
Gate-Emitter Voltage-Max 20V
Height 9.652mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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