IRLH5034TRPBF Espesifikasyon teknoloji

IRLH5034TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 3.6W Ta 156W Tc
Power Dissipation 156W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 150μA
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Rise Time 54ns
Vgs (Max) ±16V
Turn-Off Delay Time 31 ns
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 360 mJ
Length 6.1468mm
Radiation Hardening No
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 5
Resistance 3.2MOhm
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 29A
Pulsed Drain Current-Max (IDM) 400A
Height 990.6μm
Width 5.15mm
RoHS Status ROHS3 Compliant
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