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IRLR3636PBF Espesifikasyon teknoloji

IRLR3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Published 2009
Part Status Discontinued
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 143W Tc
Power Dissipation 143W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 216ns
Vgs (Max) ±16V
Turn-Off Delay Time 43 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 60V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.8MOhm
Number of Elements 1
Element Configuration Single
Turn On Delay Time 45 ns
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 96 ns
Continuous Drain Current (ID) 99A
Gate to Source Voltage (Vgs) 16V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRLR3636PBF manifaktirè mak: Infineon Technologies, Bonchip stock, IRLR3636PBF pri referans. IRLR3636PBF paramèt, IRLR3636PBF Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize IRLR3636PBF Pluggable Connectors, DSP Datesheet PDF, jwenn IRLR3636PBF dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, IRLR3636PBF leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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