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IRLR3717TRPBF Espesifikasyon teknoloji

MOSFET N-CH 20V 120A DPAK

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.004Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 89W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.45V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 30A
Pulsed Drain Current-Max (IDM) 460A
Avalanche Energy Rating (Eas) 460 mJ
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