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SGB15N120ATMA1 Espesifikasyon teknoloji

SGB15N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 2
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 198W
Polarity/Channel Type N-CHANNEL
Current - Collector (Ic) (Max) 30A
Test Condition 800V, 15A, 33 Ω, 15V
Turn Off Time-Nom (toff) 683 ns
Gate Charge 130nC
Td (on/off) @ 25°C 18ns/580ns
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 68 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
IGBT Type NPT
Current - Collector Pulsed (Icm) 52A
Switching Energy 1.9mJ
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SGB15N60ATMA1 International Rectifier (Infineon Technologies) Transistors - IGBTs - Sèl 2511
SGB15N60ATMA1 Infineon Technologies Sèl IGBTs
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SGB15N60HSATMA1 International Rectifier (Infineon Technologies) Transistors - IGBTs - Sèl 2563
SGB15N60HSATMA1 Infineon Technologies Sèl IGBTs

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