SPD02N80C3BTMA1 Espesifikasyon teknoloji

Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Discontinued
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Avalanche Energy Rating (Eas) 90 mJ
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Power Dissipation-Max 42W Tc
Power Dissipation 42W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 120μA
Current - Continuous Drain (Id) @ 25°C 2A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 65 ns
JEDEC-95 Code TO-252AA
Max Dual Supply Voltage 800V
Pulsed Drain Current-Max (IDM) 6A
Radiation Hardening No
Lead Free Lead Free
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