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IPB029N06N3GE8187ATMA1 Espesifikasyon teknoloji

MOSFET N-CH 60V 120A TO263-3

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 118µA
Supplier Device Package PG-TO263-3
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 100A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
FET Type N-Channel
Drain to Source Voltage (Vdss) 60V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 188W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
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