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IPD65R250C6XTMA1 Espesifikasyon teknoloji

MOSFET N-CH 650V 16.1A TO-252

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 400µA
Technology MOSFET (Metal Oxide)
Series CoolMOS™
Power Dissipation (Max) 208.3W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 650V 16.1A (Tc) 208.3W (Tc) Surface Mount PG-TO252-3
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO252-3
Rds On (Max) @ Id, Vgs 250 mOhm @ 4.4A, 10V
Packaging Tape & Reel (TR)
Other Names IPD65R250C6XTMA1TR SP000898654
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 16.1A (Tc)
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