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LND150K1-G Espesifikasyon teknoloji

Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 360mW Ta
Power Dissipation 360mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Current - Continuous Drain (Id) @ 25°C 13mA Tj
Drive Voltage (Max Rds On,Min Rds On) 0V
Fall Time (Typ) 1.3 μs
Continuous Drain Current (ID) 13mA
Drain to Source Breakdown Voltage 500V
Height 1.02mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Turn On Delay Time 90 ns
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rise Time 450ns
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
Gate to Source Voltage (Vgs) 20V
FET Feature Depletion Mode
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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