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IXFN360N10T Espesifikasyon teknoloji

MOSFET N-CH 100V 360A SOT-227B

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series HiPerFET™
Power Dissipation (Max) 830W (Tc)
Package / Case SOT-227-4, miniBLOC
Mounting Type Chassis Mount
Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package SOT-227B
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 180A, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 360A
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