SIR846DP-T1-GE3 Espesifikasyon teknoloji

MOSFET N-CH 100V 60A PPAK SO-8

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2870pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Detailed Description N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 7.8 mOhm @ 20A, 10V
Packaging Tape & Reel (TR)
Other Names SIR846DP-T1-GE3TR SIR846DPT1GE3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
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SIR846DP-T1-GE3 manifaktirè mak: Electro-Films (EFI) / Vishay, Bonchip stock, SIR846DP-T1-GE3 pri referans. SIR846DP-T1-GE3 paramèt, SIR846DP-T1-GE3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SIR846DP-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, jwenn SIR846DP-T1-GE3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SIR846DP-T1-GE3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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