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2N7000RLRA Espesifikasyon teknoloji

MOSFET N-CH 60V 200MA TO-92

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 6 days ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.95
Voltage - Rated DC 60V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Power Dissipation-Max 350mW Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 10 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 5Ohm
Feedback Cap-Max (Crss) 5 pF
Lead Free Contains Lead
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Current Rating 200mA
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Vgs (Max) ±20V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 60V
RoHS Status Non-RoHS Compliant
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